sot23 npn silicon planar darlington transistors issue 4 - december 1996 complementary types - fmmta12 ? none FMMTA13 ? fmmta63 fmmta14 ? fmmta64 partmarking details ? fmmta12 ? 3w FMMTA13 ? 1m fmmta14 ? 1n absolute maximum ratings. parameter symbol fmmta12 FMMTA13/14 unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v collector-emitter voltage v ces 20 40 v emitter-base voltage v ebo 10 v continuous collector current i c 300 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-emitter fmmta12 breakdown voltage FMMTA13/14 v (br)ces 20 40 v v i c =100 m a, i b =0* i c =100 m a, i b =0* collector cut-off fmmta12 current i ces 100 na v cb =15v, v be =0 collector cut-off fmmta12 current FMMTA13/14 i cbo 100 100 na na v cb =15v, i e =0 v cb =30v, i e =0 emitter cut-off current i ebo 100 na v eb =10v, i c =0 static forward fmmta12 current transfer FMMTA13 ratio FMMTA13 fmmta14 fmmta14 h fe 20k 5k 10k 10k 20k i c =10ma, v ce =5v* i c =10ma, v ce =5v* i c =100ma, v ce =5v* i c =10ma, v ce =5v* i c =100ma, v ce =5v* collector-emitter fmmta12 saturation voltage FMMTA13/14 v ce(sat) 1.0 0.9 v v i c =10ma, i b =0.01ma i c =100ma, i b =0.1ma base-emitter fmmta12 on voltage FMMTA13/14 v be(on) 1.4 2.0 v v i c =10ma, v ce =5v* i c =100ma,v ce =5v* *measured under pulsed conditions. pulse width =300 m s. duty cycle 2% spice parameter data is available upon request for these devices for typical graphs see fmmt38a datasheet fmmta12 FMMTA13 fmmta14 c b e
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